Investigation of p-CuO/n-Cu₁-ₓInₓO core/shell nanowire structure performance in UV photodetectors
- Authors
- Shin, Dong Su; Cho, Inje; Kim, Taek Gon; Jeong, Seong Hyeon; Park, Jinsub
- Issue Date
- Dec-2017
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- CuO NWs; CuInO nanocomposites; Core/shell; Pn junction; Photodetector
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.728, pp.1180 - 1185
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 728
- Start Page
- 1180
- End Page
- 1185
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/18607
- DOI
- 10.1016/j.jallcom.2017.09.071
- ISSN
- 0925-8388
- Abstract
- We report on the formation of a pn junction through the use of CuO/Cu1-xInxO core/shell nanowire (NW) structures for application in photodetectors. The CuO NWs arrays were prepared by simple heat-treatment of Cu foil at 500 degrees C in ambient air in a furnace. The Cu1-xInxO nanocomposites synthesized by reflux condensation were drop-casted onto prepared p-CuO NWs arrays to form a core/shell pn junction. Investigation of Cu1-xInxO nanocomposites containing differing amounts of In2O3 (from pure CuO nanocomposites to nanocomposites including 80% In2O3) exhibits the changed electrical polarity that varies from p-type to n-type. Following the formation of the indium tin oxide (ITO) electrode on the Cu1-xInxO shell surface, the observed current-voltage (I-V) curves clearly showed typical rectifying p-n diode characteristics. Our suggested p-n heterojunction yielded a 3.48-fold increase in photocurrent level upon Xe lamp illumination when compared with current in the dark state. Additionally, the fabricated core/shell p-n junction exhibited a photoresponsivity of 0.045 A/W at 374 nm.
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