Achieving high carrier mobility in IGZO transistors by catalytic metal assisted crystallization

Abstract

The transition metal catalytic layer has facilitated the low-temperature crystallization of amorphous indium gallium zinc oxide semiconductor. Subsequently, the significant enhancement in terms of device performance was observed for the crystallized IGZO transistor at a low annealing temperature of 300 °C: the field-effect mobility increased up to 54.0 cm2/Vs. © 2017 Proceedings of the International Display Workshops. All rights reserved.