Self-assembled, highly crystalline porous ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) interlayer for Si/organic hybrid solar cells
- Authors
- Kang, Sung Bum; Jeong, Myeong Hoon; Choi, In Young; Sohn, So-Dam; Kim, Su Han; Shin, Hyung-Joon; Park, Won Il; Shin, Jae Cheol; Song, Myoung Hoon; Choi, Kyoung Jin
- Issue Date
- Nov-2017
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Ferroelectric materials; Thin porous films; Polymers; Breath figure; Solar cells
- Citation
- NANO ENERGY, v.41, pp.243 - 250
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO ENERGY
- Volume
- 41
- Start Page
- 243
- End Page
- 250
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/18653
- DOI
- 10.1016/j.nanoen.2017.09.033
- ISSN
- 2211-2855
- Abstract
- Ferroelectric polymers can effectively improve the photovoltaic performance of solar cells, inducing an electric field to promote the dissociation of electron-hole pairs, with the thus generated charges collected from open pores. Since such performance enhancement requires materials with a unique porous crystalline structure, we herein present a novel route to highly crystalline and porous poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) thin films utilizing a modified breath figure method based on spin coating. The key feature of the above method is the addition of small amounts of water to the acetone/P(VDF-TrFE) solution to produce porous ferroelectric thin films which have significantly higher crystallinity values than nanostructures or films prepared by other methods. Furthermore, n-Si/poly(3,4-ethylene dioxy thiophene): poly(styrene sulfonate) hybrid solar cells with porous P(VDF-TrFE) interlayers are demonstrated to exhibit spontaneous polarization sufficient for increasing their open circuit voltages and fill factors. Finite-difference time-domain simulation reveals that the electric field due to the above spontaneous polarization increases the built-in electric field of the Schottky junction between n-Si and poly(3,4-ethylene dioxy thiophene): poly(styrenesulfonate) and reduces the reverse leakage current of the Schottky diode. Thus, the organic ferroelectric thin films with controlled porosity proposed in this study are well suited for a broad range of optoelectronic applications.
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