Performance Improvement of p-Channel Tin Monoxide Transistors With a Solution-Processed Zirconium Oxide Gate Dielectric
DC Field | Value | Language |
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dc.contributor.author | Azmi, Azida | - |
dc.contributor.author | Lee, Jiwon | - |
dc.contributor.author | Gim, Tae Jung | - |
dc.contributor.author | Choi, Rino | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2021-08-02T14:28:15Z | - |
dc.date.available | 2021-08-02T14:28:15Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-11 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/18671 | - |
dc.description.abstract | This letter reports the fabrication of p-channel tin monoxide (SnO) thin-film transistors (TFTs) with a highpermittivity zirconiumoxide (ZrO2) gate insulatorfilm, which were prepared by a low-cost spin-cast method. The spincast ZrO2 dielectrics exhibit a low leakage current density of 4.5x10(-8) A/cm(2) at 1 MV/cm. Introducing the ZrO2 dielectric in top-typeSnOTFTs allows for a reduction in the driving gate voltage range from 80 to 10 V, ascomparedwith devices with a thermal SiO2 gate insulator. Additionally, a high fieldeffect mobility of 2.5 cm(2)/Vs and an ION/OFF of 3 x10(3) were preserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Performance Improvement of p-Channel Tin Monoxide Transistors With a Solution-Processed Zirconium Oxide Gate Dielectric | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1109/LED.2017.2758349 | - |
dc.identifier.scopusid | 2-s2.0-85030789807 | - |
dc.identifier.wosid | 000413794800009 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.38, no.11, pp.1543 - 1546 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 38 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1543 | - |
dc.citation.endPage | 1546 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ZRO₂ | - |
dc.subject.keywordAuthor | ZrO₂ gate dielectric | - |
dc.subject.keywordAuthor | spin cast | - |
dc.subject.keywordAuthor | tin monoxide | - |
dc.subject.keywordAuthor | p-type semiconductor | - |
dc.subject.keywordAuthor | thin-film transistors | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/8055568 | - |
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