Design and Analysis of f(T)-Doubler-Based RF Amplifiers in SiGe HBT Technology
DC Field | Value | Language |
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dc.contributor.author | Sarker, Md Arifur R | - |
dc.contributor.author | Song, Ickhyun | - |
dc.date.accessioned | 2023-07-24T09:24:53Z | - |
dc.date.available | 2023-07-24T09:24:53Z | - |
dc.date.created | 2023-07-19 | - |
dc.date.issued | 2020-05 | - |
dc.identifier.issn | 2079-9292 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/187321 | - |
dc.description.abstract | For performance-driven systems such as space-based applications, it is important to maximize the gain of radio-frequency amplifiers (RFAs) with a certain tolerance against radiation, temperature effects, and small form factor. In this work, we present a K-band, compact high-gain RFA using an f(T)-doubler topology in a silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) technology platform. The through-silicon vias (TSVs), typically used for small-size chip packaging purposes, have been effectively utilized as an adjustable matching element for input impedance, reducing the overall area of the chip. The proposed RFA, fabricated in a modest 0.35 mu m SiGe technology, achieves a gain of 14.1 dB at 20 GHz center frequency, and a noise figure (NF) of 11.2 dB at the same frequency, with a power consumption of 3.3 mW. The proposed design methodology can be used for achieving high gain, avoiding a complex multi-stage amplifier design approach. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.title | Design and Analysis of f(T)-Doubler-Based RF Amplifiers in SiGe HBT Technology | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Ickhyun | - |
dc.identifier.doi | 10.3390/electronics9050772 | - |
dc.identifier.scopusid | 2-s2.0-85084347364 | - |
dc.identifier.wosid | 000549854600071 | - |
dc.identifier.bibliographicCitation | ELECTRONICS, v.9, no.5, pp.1 - 9 | - |
dc.relation.isPartOf | ELECTRONICS | - |
dc.citation.title | ELECTRONICS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Information Systems | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THROUGH-SILICON-VIAS | - |
dc.subject.keywordPlus | BAND DARLINGTON AMPLIFIERS | - |
dc.subject.keywordAuthor | extreme-environment electronics | - |
dc.subject.keywordAuthor | f(T) doubler | - |
dc.subject.keywordAuthor | heterojunction bipolar transistor (HBT) | - |
dc.subject.keywordAuthor | radio-frequency amplifier (RFA) | - |
dc.subject.keywordAuthor | silicon-germanium (SiGe) | - |
dc.subject.keywordAuthor | through-silicon-via (TSV) | - |
dc.identifier.url | https://www.mdpi.com/2079-9292/9/5/772 | - |
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