Design and Analysis of f(T)-Doubler-Based RF Amplifiers in SiGe HBT Technologyopen access
- Authors
- Sarker, Md Arifur R; Song, Ickhyun
- Issue Date
- May-2020
- Publisher
- MDPI
- Keywords
- extreme-environment electronics; f(T) doubler; heterojunction bipolar transistor (HBT); radio-frequency amplifier (RFA); silicon-germanium (SiGe); through-silicon-via (TSV)
- Citation
- ELECTRONICS, v.9, no.5, pp.1 - 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS
- Volume
- 9
- Number
- 5
- Start Page
- 1
- End Page
- 9
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/187321
- DOI
- 10.3390/electronics9050772
- ISSN
- 2079-9292
- Abstract
- For performance-driven systems such as space-based applications, it is important to maximize the gain of radio-frequency amplifiers (RFAs) with a certain tolerance against radiation, temperature effects, and small form factor. In this work, we present a K-band, compact high-gain RFA using an f(T)-doubler topology in a silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) technology platform. The through-silicon vias (TSVs), typically used for small-size chip packaging purposes, have been effectively utilized as an adjustable matching element for input impedance, reducing the overall area of the chip. The proposed RFA, fabricated in a modest 0.35 mu m SiGe technology, achieves a gain of 14.1 dB at 20 GHz center frequency, and a noise figure (NF) of 11.2 dB at the same frequency, with a power consumption of 3.3 mW. The proposed design methodology can be used for achieving high gain, avoiding a complex multi-stage amplifier design approach.
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