Self-Heating and Electrothermal Properties o Advanced Sub-5-nm Node Nanoplate FET
- Authors
- Myeong, Ilho; Song, Ickhyun; Kang, Min Jae; Shin, Hyungcheol
- Issue Date
- Jul-2020
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Self-heating effect (SHE); nanoplate-FET; thermal resistance; temperature; time delay; bias temperature instability (BT/); hot carrier injection (HCI)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.41, no.7, pp 977 - 980
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 41
- Number
- 7
- Start Page
- 977
- End Page
- 980
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/187322
- DOI
- 10.1109/LED.2020.2998460
- ISSN
- 0741-3106
1558-0563
- Abstract
- In this paper, Self-Heating Effect (SHE) of Gate-All-Around (GAA) nanoplate field effect transistor (FET) with variations of active area specifications including number of vertically stacked channels, metal gatethickness, and channel width, is investigated using TCAD simulations. Our research suggests that varying these architecture parameters not only affect overall performance of sub-5-nm node GAA nanoplate FET such as on-current degradation and time-delay, but also greatly impact thermal reliability such as lattice temperature and thermal resistance, which are comprehensively analyzed using the Figure of Merit (FoM). Furthermore, thermal reliability of GAA nanoplate-FET is analyzed from perspective of Hot Carrier Injection (HO) / Bias Temperature Instability (BM lifetime variation using maximum lattice temperature (T-L,T-max) and metal gate thickness (T-M ).
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