Investigation of f(T)-Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs
DC Field | Value | Language |
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dc.contributor.author | Sarker, Md Arifur R | - |
dc.contributor.author | Omprakash, Anup P | - |
dc.contributor.author | Cho, Moon-Kyu | - |
dc.contributor.author | Cressler, John D | - |
dc.contributor.author | Song, Ickhyun | - |
dc.date.accessioned | 2023-07-24T09:25:10Z | - |
dc.date.available | 2023-07-24T09:25:10Z | - |
dc.date.created | 2023-07-19 | - |
dc.date.issued | 2020-09 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/187324 | - |
dc.description.abstract | This letter presents the application of the f(T)-doubler technique, for the first time, to improve the unity-gain frequency (f(T)) of inverse-mode (IM) silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). An f(T) -doubler structure, which used three identical SiGe HBTs with the same emitter area of 0.07 (width) x 0.9 (length) mu m(2), is implemented in a commercial 0.13-mu m SiGe-BiCMOS technology platform. A peak f(T) of 77 GHz is extrapolated for the IM f(T) doubler, whereas a peak fT of a single IM SiGe HBT is found to be 53 GHz, exhibiting an increase of about 46% in f(T) from the f(T)-doubler technique. The maximum oscillation frequency of the IM f(T) doubler using Mason's unilateral gain is about 158 GHz. In addition, small-signal model parameters of the IM fT doubler are presented, which show the IM f(T)-doubler structures can be treated as a single transistor element for high-frequency circuit design. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Investigation of f(T)-Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Ickhyun | - |
dc.identifier.doi | 10.1109/LMWC.2020.3010538 | - |
dc.identifier.scopusid | 2-s2.0-85091114860 | - |
dc.identifier.wosid | 000567488100007 | - |
dc.identifier.bibliographicCitation | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.30, no.9, pp.873 - 875 | - |
dc.relation.isPartOf | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.title | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | - |
dc.citation.volume | 30 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 873 | - |
dc.citation.endPage | 875 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.subject.keywordAuthor | f(T) doubler | - |
dc.subject.keywordAuthor | heterojunction bipolar transistor (HBT) | - |
dc.subject.keywordAuthor | inverse mode (IM) | - |
dc.subject.keywordAuthor | maximum oscillation frequency | - |
dc.subject.keywordAuthor | silicon-germanium (SiGe) | - |
dc.subject.keywordAuthor | small-signal model | - |
dc.subject.keywordAuthor | unity-gain frequency | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/9152134 | - |
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