Investigation of f(T)-Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs
- Authors
- Sarker, Md Arifur R; Omprakash, Anup P; Cho, Moon-Kyu; Cressler, John D; Song, Ickhyun
- Issue Date
- Sep-2020
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- f(T) doubler; heterojunction bipolar transistor (HBT); inverse mode (IM); maximum oscillation frequency; silicon-germanium (SiGe); small-signal model; unity-gain frequency
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.30, no.9, pp.873 - 875
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 30
- Number
- 9
- Start Page
- 873
- End Page
- 875
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/187324
- DOI
- 10.1109/LMWC.2020.3010538
- ISSN
- 1531-1309
- Abstract
- This letter presents the application of the f(T)-doubler technique, for the first time, to improve the unity-gain frequency (f(T)) of inverse-mode (IM) silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). An f(T) -doubler structure, which used three identical SiGe HBTs with the same emitter area of 0.07 (width) x 0.9 (length) mu m(2), is implemented in a commercial 0.13-mu m SiGe-BiCMOS technology platform. A peak f(T) of 77 GHz is extrapolated for the IM f(T) doubler, whereas a peak fT of a single IM SiGe HBT is found to be 53 GHz, exhibiting an increase of about 46% in f(T) from the f(T)-doubler technique. The maximum oscillation frequency of the IM f(T) doubler using Mason's unilateral gain is about 158 GHz. In addition, small-signal model parameters of the IM fT doubler are presented, which show the IM f(T)-doubler structures can be treated as a single transistor element for high-frequency circuit design.
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