A new etching process for zinc oxide with etching rate and crystal plane control: experiment, calculation, and membrane application
- Authors
- Chung, Jiyong; Lee, Jeong Hee; Kim, Kyeounghak; Lee, Jaeyoung; Yoo, Sung Jong; Han, Jeong Woo; Kim, Jinsoo; Yu, Taekyung
- Issue Date
- Jul-2019
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE, v.11, no.25, pp.12337 - 12346
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE
- Volume
- 11
- Number
- 25
- Start Page
- 12337
- End Page
- 12346
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/187342
- DOI
- 10.1039/c9nr02248a
- ISSN
- 2040-3364
- Abstract
- The etching process can be a useful method for the morphology control of nanostructures. Using precise experiments and theoretical calculations, we report a new ZnO etching process triggered by the reaction of ZnO with transition metal cations and demonstrate that the etching rate and direction could be controlled by varying the kind of transition metal cation. In addition, the developed etching process was introduced to form a thin and uniform ZnO layer, which was utilized for the fabrication of an improved propylene-selective ZIF-8 membrane via conversion seeding and secondary growth.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 화학공학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.