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Area-Selective Atomic Layer Deposition of Ruthenium Thin Films by Chemo-Selective Adsorption of Short Alkylating Agents
- Authors
- Lee,Jeong-Min; Kim, Woo-Hee
- Issue Date
- May-2023
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Aminosilane inhibitor; Area-selective atomic layer deposition; Ruthenium; Surface modification
- Citation
- 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings, pp.1 - 3
- Indexed
- SCOPUS
- Journal Title
- 2023 IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference, IITC/MAM 2023 - Proceedings
- Start Page
- 1
- End Page
- 3
- Abstract
- As advanced semiconductor devices went into the extremely narrow dimensions, ruthenium has received great deal of attention for next-generation gate electrodes and metal interconnects. Accordingly, area-selective atomic layer deposition (AS-ALD) of Ru films is essentially required. In this work, we report effects of surface modification treated with vapor dosing of (N,N-diethylamino)trimethylsilane (DEATMS) as small alkylating agents on technologically important substrates of Si, SiO2, SiN, TiN, and W against Ru ALD. Through enhanced adsorption of DEATMS with discrete feeding method (DFM), significant growth retardation against Ru ALD was selectively found on SiO2, SiN, and TiN in contrast to Si-H and W. © 2023 IEEE.
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