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Highly efficient InGaN/GaN blue LED grown on Si (111) substrate
- Authors
- Kim, Jun-Youn; Tak, Yongjo; Lee, Jae Won; Hong, Hyun-Gi; Chae, Suhee; Choi, Hyoji; Min, Bokki; Park, Youngsoo; Kim, Minho; Lee, Seongsuk; Cha, Namgoo; Shin, Yoonhee; Kim, Jong-Ryeol; Shim, Jong-In
- Issue Date
- May-2011
- Publisher
- IEEE
- Citation
- 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011, pp.1 - 2
- Indexed
- SCOPUS
- Journal Title
- 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011
- Start Page
- 1
- End Page
- 2
- Abstract
- For the first time, based on the high crystalline quality of n-GaN on Si template, highly efficient InGaN/GaN LEDs grown on 4-inch silicon substrates comparable to those on sapphire substrates have been successfully demonstrated. At driving current of 350 mA, the overall output power of 11 mm2 LED chips exceeded 420 mW and forward voltage was 3.2 V under un-encapsulated condition, which is the best value among the reported values of blue LED grown on Si substrates. The internal quantum efficiency of 76% at injection current of 350 mA was measured. © 2011 OSA.
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