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High Resolution a-IGZO TFT Pixel Circuit for Compensating Threshold Voltage Shifts and OLED Degradations
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Daejung | - |
| dc.contributor.author | Kim, Yongchan | - |
| dc.contributor.author | Lee, Suwon | - |
| dc.contributor.author | Kang, Moon Sung | - |
| dc.contributor.author | Kim, Do Hwan | - |
| dc.contributor.author | Lee, Hojin | - |
| dc.date.accessioned | 2021-08-02T14:29:54Z | - |
| dc.date.available | 2021-08-02T14:29:54Z | - |
| dc.date.created | 2021-05-14 | - |
| dc.date.issued | 2017-09 | - |
| dc.identifier.issn | 2168-6734 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/18787 | - |
| dc.description.abstract | In this paper, we propose a novel voltage programmed pixel circuit based on amorphous-indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) for active-matrix organic light-emitting displays. Through the extensive simulation work based on a-IGZO TFT and OLED models, we confirm that the proposed pixel circuit can compensate for threshold voltage variations of TFTs and OLED degradation over wide dynamic range (similar to 10(4)) of OLED current as well as achieve a high pixel aperture ratio with the suppressed OLED current error rate below 9%. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | High Resolution a-IGZO TFT Pixel Circuit for Compensating Threshold Voltage Shifts and OLED Degradations | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Do Hwan | - |
| dc.identifier.doi | 10.1109/JEDS.2017.2716368 | - |
| dc.identifier.scopusid | 2-s2.0-85021810532 | - |
| dc.identifier.wosid | 000408381300011 | - |
| dc.identifier.bibliographicCitation | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.5, no.5, pp.372 - 377 | - |
| dc.relation.isPartOf | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - |
| dc.citation.title | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | - |
| dc.citation.volume | 5 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 372 | - |
| dc.citation.endPage | 377 | - |
| dc.type.rims | ART | - |
| dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
| dc.subject.keywordPlus | SI | - |
| dc.subject.keywordAuthor | Active-matrix organic light-emitting display (AMOLED) | - |
| dc.subject.keywordAuthor | pixel circuit | - |
| dc.subject.keywordAuthor | amorphous-indium-gallium-zinc-oxide TFT (a-IGZO TFT) | - |
| dc.subject.keywordAuthor | compensation | - |
| dc.subject.keywordAuthor | high aperture ratio | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/7953647 | - |
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Related Researcher
- Kim, Do Hwan
- COLLEGE OF ENGINEERING (DEPARTMENT OF CHEMICAL ENGINEERING)