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Selective Cu electrodeposition for Through Glass Via (TGV)
- Authors
- Yang, Fan; Wang, Qing; Lee, Jinhyun; Yoon, Sanghwa; Yoo, Bongyoung
- Issue Date
- Mar-2023
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Defect-free filling; Selective Cu electrodeposition; Through-glass via
- Citation
- 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, pp.1 - 4
- Indexed
- SCOPUS
- Journal Title
- 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
- Start Page
- 1
- End Page
- 4
- Abstract
- Cu electrodeposition is used to fill through-glass via with electrodes and use them as interconnects. However, Cu deposited on the surface requires an additional process to remove the Cu film. To solve this issue, Cu deposition on the substrate surface is suppressed to the greatest extent possible in the case of defect-free superfilling by additives and pulse reverse current. After that, we will further study how to inhibit the deposition of metal on the surface of the substrate by sputtering the insulating layer. © 2023 IEEE.
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