Ozone based high-temperature atomic layer deposition of SiO2 thin films
DC Field | Value | Language |
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dc.contributor.author | Hwang, Su Min | - |
dc.contributor.author | Qin, Zhiyang | - |
dc.contributor.author | Kim, Harrison Sejoon | - |
dc.contributor.author | Ravichandran, Arul | - |
dc.contributor.author | Jung, Yong Chan | - |
dc.contributor.author | Kim, Si Joon | - |
dc.contributor.author | Ahn, Jinho | - |
dc.contributor.author | Hwang, Byung Keun | - |
dc.contributor.author | Kim, Jiyoung | - |
dc.date.accessioned | 2021-07-30T04:53:32Z | - |
dc.date.available | 2021-07-30T04:53:32Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2020-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1887 | - |
dc.description.abstract | In this paper, atomic layer deposition of SiO2 thin films was investigated with Si2Cl6 and O-3/O-2 (400 g m(-3)). O-3/O-2 is not preferred for hightemperature (>400 degrees C) processes due to its lower decomposition temperature, especially in a furnace-type chamber. However, with Si oxidation test using a cold-wall chamber, we have demonstrated the reactivity of O-3/O-2 up to 800 degrees C in comparison with O-2 and H2O. The ALD of SiO2 films was examined at deposition temperatures from 500 degrees C to 700 degrees C. The growth rate at 600 degrees C was saturated to 0.03 nm/cycle with Si2Cl6 exposure over 1.2 x 10(5) L. O-3/O-2 also showed ALD-like saturation behaviors for exposures over 2.4 x 10(6) L. The ALD films deposited at 600 degrees C exhibited relatively smooth surface roughness (<0.18 nm) and low wet etch rate (1.6 nm min(-1), 500:1 HF) that are comparable with PECVD SiO2 deposited at 250 degrees C and LPCVD SiO2 deposited at 450 degrees C. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Ozone based high-temperature atomic layer deposition of SiO2 thin films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jinho | - |
dc.identifier.doi | 10.35848/1347-4065/ab78e4 | - |
dc.identifier.scopusid | 2-s2.0-85083341866 | - |
dc.identifier.wosid | 000519637800006 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.59, pp.1 - 5 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 59 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON-OXIDE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | H2O | - |
dc.subject.keywordPlus | HEXACHLORODISILANE | - |
dc.subject.keywordPlus | SIO2-FILMS | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | DIOXIDE | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | SICL4 | - |
dc.identifier.url | https://iopscience.iop.org/article/10.35848/1347-4065/ab78e4 | - |
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