Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO x-based metal-ferroelectric-insulator-semiconductor stack
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Min, Kyung Kyu | - |
dc.contributor.author | Yu, Junsu | - |
dc.contributor.author | Kim, Yeonwoo | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.contributor.author | Kwon, Daewoong | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.date.accessioned | 2023-08-07T07:48:45Z | - |
dc.date.available | 2023-08-07T07:48:45Z | - |
dc.date.created | 2023-07-21 | - |
dc.date.issued | 2021-12 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/188925 | - |
dc.description.abstract | Ferroelectric tunnel junction (FTJ) has been considered as a promising candidate for next-generation memory devices due to its non-destructive and low power operations. In this article, we demonstrate the interlayer (IL) engineering in the FTJs to boost device performances. Through the analysis on the material and electrical characteristics of the fabricated FTJs with engineered IL stacks, it is clearly found that the insertion of an Al2O3 layer between the SiO2 insulator and the pure-HfO (x) FE improves the read disturbance (2V (c) = 2.2 V increased), the endurance characteristics (tenfold improvement), and the cell-to-cell TER variation simultaneously without the degradation of the ferroelectricity (less than 5%) and the polarization switching speeds through grain size modulation. Based on these investigations, the guidelines of IL engineering for low power ferroelectric devices were provided to obtain stable and fast memory operations. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO x-based metal-ferroelectric-insulator-semiconductor stack | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Daewoong | - |
dc.identifier.doi | 10.1088/1361-6528/ac1e50 | - |
dc.identifier.scopusid | 2-s2.0-85115215194 | - |
dc.identifier.wosid | 000696373600001 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.32, no.49 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 32 | - |
dc.citation.number | 49 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other TopicsMaterials SciencePhysics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & NanotechnologyMaterials Science, MultidisciplinaryPhysics, Applied | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | POLARIZATION | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | ferroelectric tunnel junction | - |
dc.subject.keywordAuthor | ferroelectric hafnium oxide (HfO (x) )interlayer engineering | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/1361-6528/ac1e50 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.