Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor
DC Field | Value | Language |
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dc.contributor.author | Kim, Min-Won | - |
dc.contributor.author | Kim, Ji-Hun | - |
dc.contributor.author | Kim, Hyeon-Jun | - |
dc.contributor.author | Seo, Jeong-Woo | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2023-08-16T07:40:54Z | - |
dc.date.available | 2023-08-16T07:40:54Z | - |
dc.date.created | 2023-07-21 | - |
dc.date.issued | 2022-12 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189071 | - |
dc.description.abstract | Tunnel field-effect transistors (TFETs) have garnered great interest as an option for the replacement of metal-oxide-semiconductor field-effect transistors owing to their extremely low off-current and fast switching suitable for low-power-consumption applications. However, conventional doped TFETs have the disadvantage of introducing undesirable random dopant fluctuation (RDF) events, which cause a large variance in the threshold voltage and ambipolar leakage current at negative gate voltages. In this study, a simple approach for charge plasma-based doping-less TFETs (DL-TFETs), including the Ge/Si bilayer frame, which affects the RDF and low on-current issues, was developed by the commercially available Silvaco Atlas device simulator. The use of the Ge/Si bilayer enhances the on-current and point subthreshold swing to 1.4 x 10(-6) A and 16.6 mV dec(-1), respectively. In addition, the dependencies of the Ge/Si junction boundary position and Ge content were examined systematically to attain a firm understanding of the electrical features in DL-TFETs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Simple Ge/Si bilayer junction-based doping-less tunnel field-effect transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.1088/1361-6528/aca618 | - |
dc.identifier.scopusid | 2-s2.0-85144321378 | - |
dc.identifier.wosid | Article | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.34, no.9, pp.1 - 8 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 34 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials SciencePhysics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NANOWIRE FET | - |
dc.subject.keywordPlus | MOTT TRANSITION | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | FINFET | - |
dc.subject.keywordPlus | TFET | - |
dc.subject.keywordAuthor | tunnel field-effect transistor | - |
dc.subject.keywordAuthor | charge plasma | - |
dc.subject.keywordAuthor | Ge condensation | - |
dc.subject.keywordAuthor | silvaco atlas | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/1361-6528/aca618 | - |
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