One Nanometer HfO2-Based Ferroelectric Tunnel Junctions on Silicon
DC Field | Value | Language |
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dc.contributor.author | Cheema, Suraj S. | - |
dc.contributor.author | Shanker, Nirmaan | - |
dc.contributor.author | Hsu, Cheng-Hsiang | - |
dc.contributor.author | Datar, Adhiraj | - |
dc.contributor.author | Bae, Jongho | - |
dc.contributor.author | Kwon, Daewoong | - |
dc.contributor.author | Salahuddin, Sayeef | - |
dc.date.accessioned | 2023-08-16T08:09:46Z | - |
dc.date.available | 2023-08-16T08:09:46Z | - |
dc.date.created | 2023-07-21 | - |
dc.date.issued | 2022-06 | - |
dc.identifier.issn | 2199160X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189291 | - |
dc.description.abstract | In ferroelectric materials, spontaneous symmetry breaking leads to a switchable electric polarization, which offers significant promise for nonvolatile memories. In particular, ferroelectric tunnel junctions (FTJs) have emerged as a new resistive switching memory which exploits polarization-dependent tunnel current across a thin ferroelectric barrier. This work integrates FTJs with complementary metal-oxide-semiconductor-compatible Zr-doped HfO2 (Zr:HfO2) ferroelectric barriers of just 1 nm thickness, grown by atomic layer deposition on silicon. These 1 nm Zr:HfO2 tunnel junctions exhibit large polarization-driven electroresistance (>20 000%), the largest value reported for HfO2-based FTJs. In addition, due to just a 1 nm ferroelectric barrier, these junctions provide large tunneling current (>1 A cm(-2)) at low read voltage, orders of magnitude larger than reported thicker HfO2-based FTJs. Therefore, this proof-of-principle demonstration provides an approach to simultaneously overcome three major drawbacks of prototypical FTJs: a Si-compatible ultrathin ferroelectric, large electroresistance, and large read current for high-speed operation. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.title | One Nanometer HfO2-Based Ferroelectric Tunnel Junctions on Silicon | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Daewoong | - |
dc.identifier.doi | 10.1002/aelm.202100499 | - |
dc.identifier.scopusid | 2-s2.0-85115852733 | - |
dc.identifier.wosid | 000700950500001 | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.8, no.6 | - |
dc.relation.isPartOf | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | ELECTRORESISTANCE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | PHYSICS | - |
dc.subject.keywordPlus | FUTURE | - |
dc.subject.keywordAuthor | ferroelectric tunnel junction | - |
dc.subject.keywordAuthor | hafnium oxide | - |
dc.subject.keywordAuthor | resistive switching memory | - |
dc.subject.keywordAuthor | ultrathin ferroelectricity | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/aelm.202100499 | - |
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