Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking
DC Field | Value | Language |
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dc.contributor.author | Song, Ickhyun | - |
dc.contributor.author | Ryu, Gyungtae | - |
dc.contributor.author | Jung, Seung Hwan | - |
dc.contributor.author | Cressler, John D. | - |
dc.contributor.author | Cho, Moon-Kyu | - |
dc.date.accessioned | 2023-09-04T05:33:43Z | - |
dc.date.available | 2023-09-04T05:33:43Z | - |
dc.date.created | 2023-08-29 | - |
dc.date.issued | 2023-08 | - |
dc.identifier.issn | 1424-8220 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189612 | - |
dc.description.abstract | In this work, the design of a wideband low-noise amplifier (LNA) using a resistive feedback network is proposed for potential multi-band sensing, communication, and radar applications. For achieving wide operational bandwidth and flat in-band characteristics simultaneously, the proposed LNA employs a variety of circuit design techniques, including a voltage–current (shunt–shunt) negative feedback configuration, inductive emitter degeneration, a main branch with an added cascode stage, and the shunt-peaking technique. The use of a feedback network and emitter degeneration provides broadened transfer characteristics for multi-octave coverage and a real impedance for input matching, respectively. In addition, the cascode stage pushes the band-limiting low-frequency pole, due to the Miller capacitance, to a higher frequency. Lastly, the shunt-peaking approach is optimized for the compensation of a gain reduction at higher frequency bands. The wideband LNA proposed in this study is fabricated using a commercial 0.13 μm silicon-germanium (SiGe) BiCMOS process, employing SiGe heterojunction bipolar transistors (HBTs) as the circuit’s core active elements in the main branch. The measurement results show an operational bandwidth of 2.0–29.2 GHz, a noise figure of 4.16 dB (below 26.5 GHz, which was the measurement limit), and a total power consumption of 23.1 mW under a supply voltage of 3.3 V. Regarding the nonlinearity associated with large-signal behavior, the proposed LNA exhibits an input 1-dB compression (IP1dB) point of −5.42 dBm at 12 GHz. These performance numbers confirm the strong viability of the proposed approach in comparison with other state-of-the-art designs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.title | Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Ickhyun | - |
dc.identifier.doi | 10.3390/s23156745 | - |
dc.identifier.scopusid | 2-s2.0-85167743367 | - |
dc.identifier.wosid | 001046338900001 | - |
dc.identifier.bibliographicCitation | SENSORS, v.23, no.15, pp.1 - 15 | - |
dc.relation.isPartOf | SENSORS | - |
dc.citation.title | SENSORS | - |
dc.citation.volume | 23 | - |
dc.citation.number | 15 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 15 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Analytical | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.subject.keywordPlus | LOW-POWER | - |
dc.subject.keywordPlus | LNA | - |
dc.subject.keywordPlus | GAIN | - |
dc.subject.keywordPlus | FEEDFORWARD | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | GHZ | - |
dc.subject.keywordAuthor | cascode | - |
dc.subject.keywordAuthor | inductive emitter degeneration | - |
dc.subject.keywordAuthor | low-noise amplifier (LNA) | - |
dc.subject.keywordAuthor | resistive feedback | - |
dc.subject.keywordAuthor | shunt peaking | - |
dc.subject.keywordAuthor | SiGe HBT | - |
dc.subject.keywordAuthor | wideband | - |
dc.identifier.url | https://www.mdpi.com/1424-8220/23/15/6745 | - |
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