Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peakingopen access
- Authors
- Song, Ickhyun; Ryu, Gyungtae; Jung, Seung Hwan; Cressler, John D.; Cho, Moon-Kyu
- Issue Date
- Aug-2023
- Publisher
- MDPI
- Keywords
- cascode; inductive emitter degeneration; low-noise amplifier (LNA); resistive feedback; shunt peaking; SiGe HBT; wideband
- Citation
- SENSORS, v.23, no.15, pp.1 - 15
- Indexed
- SCIE
SCOPUS
- Journal Title
- SENSORS
- Volume
- 23
- Number
- 15
- Start Page
- 1
- End Page
- 15
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189612
- DOI
- 10.3390/s23156745
- ISSN
- 1424-8220
- Abstract
- In this work, the design of a wideband low-noise amplifier (LNA) using a resistive feedback network is proposed for potential multi-band sensing, communication, and radar applications. For achieving wide operational bandwidth and flat in-band characteristics simultaneously, the proposed LNA employs a variety of circuit design techniques, including a voltage–current (shunt–shunt) negative feedback configuration, inductive emitter degeneration, a main branch with an added cascode stage, and the shunt-peaking technique. The use of a feedback network and emitter degeneration provides broadened transfer characteristics for multi-octave coverage and a real impedance for input matching, respectively. In addition, the cascode stage pushes the band-limiting low-frequency pole, due to the Miller capacitance, to a higher frequency. Lastly, the shunt-peaking approach is optimized for the compensation of a gain reduction at higher frequency bands. The wideband LNA proposed in this study is fabricated using a commercial 0.13 μm silicon-germanium (SiGe) BiCMOS process, employing SiGe heterojunction bipolar transistors (HBTs) as the circuit’s core active elements in the main branch. The measurement results show an operational bandwidth of 2.0–29.2 GHz, a noise figure of 4.16 dB (below 26.5 GHz, which was the measurement limit), and a total power consumption of 23.1 mW under a supply voltage of 3.3 V. Regarding the nonlinearity associated with large-signal behavior, the proposed LNA exhibits an input 1-dB compression (IP1dB) point of −5.42 dBm at 12 GHz. These performance numbers confirm the strong viability of the proposed approach in comparison with other state-of-the-art designs.
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