Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tan, Ava J. | - |
dc.contributor.author | Chatterjee, Korok | - |
dc.contributor.author | Zhou, Jiuren | - |
dc.contributor.author | Kwon, Daewoong | - |
dc.contributor.author | Liao, Yu-Hung | - |
dc.contributor.author | Cheema, Suraj | - |
dc.contributor.author | Hu, Chenming | - |
dc.contributor.author | Salahuddin, Sayeef | - |
dc.date.accessioned | 2023-09-04T07:42:59Z | - |
dc.date.available | 2023-09-04T07:42:59Z | - |
dc.date.created | 2023-07-21 | - |
dc.date.issued | 2020-02 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/189907 | - |
dc.description.abstract | In this work, we present an experimental demonstration of a content addressable memory (CAM) cell based on ferroelectric HfO2 field effect transistors (FeFETs). Our proposed ferroelectric CAM (FeCAM) utilizes a CMOS-compatible ferroelectric material, hafnium zirconium oxide (HZO), as the gate dielectric. We discuss operation of the FeCAM cell and propose a suitable architecture to realize in-memory computation as well as single clock cycle content-driven search. In addition, the HZO FeFET is analyzed for its intrinsic memory characteristic, and design considerations are identified for improving device and therefore projected system-level performance. Our results indicate that FeCAM is well-suited to accommodate demanding modern computational needs by sealing the gaps between conventional memory, logic, and continued device scaling. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Daewoong | - |
dc.identifier.doi | 10.1109/LED.2019.2963300 | - |
dc.identifier.scopusid | 2-s2.0-85078920469 | - |
dc.identifier.wosid | 000510750200009 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.41, no.2, pp.240 - 243 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 41 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 240 | - |
dc.citation.endPage | 243 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기 학술지(letter(letters to the editor)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | NETWORK | - |
dc.subject.keywordAuthor | Ferroelectric | - |
dc.subject.keywordAuthor | shafnium zirconium oxide | - |
dc.subject.keywordAuthor | content addressable memory | - |
dc.subject.keywordAuthor | ferroelectric memory | - |
dc.subject.keywordAuthor | FeFET | - |
dc.subject.keywordAuthor | logic-in-memory | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/8946709 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.