p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform
DC Field | Value | Language |
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dc.contributor.author | Song, Ickhyun | - |
dc.contributor.author | Cho, Moon-Kyu | - |
dc.contributor.author | Fleetwood, Zachary E. | - |
dc.contributor.author | Gong, Yunyi | - |
dc.contributor.author | Pavlidis, Spyridon | - |
dc.contributor.author | Buchner, Stephen P. | - |
dc.contributor.author | McMorrow, Dale | - |
dc.contributor.author | Paki, Pauline | - |
dc.contributor.author | Kaynak, Mehmet | - |
dc.contributor.author | Cressler, John. D. | - |
dc.date.accessioned | 2023-09-18T06:52:01Z | - |
dc.date.available | 2023-09-18T06:52:01Z | - |
dc.date.issued | 2018-01 | - |
dc.identifier.issn | 0018-9499 | - |
dc.identifier.issn | 1558-1578 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/190777 | - |
dc.description.abstract | The benefits of using p-n-p silicon-germanium (SiGe) heterojuction bipolar transistors (HBTs) in radio frequency (RF) circuits for the mitigation of single-event transients (SETs) have been investigated. As a representative circuit example, p-n-p SiGe-HBT RF single-pole single-throw (SPST) switches have been designed in a complementary SiGe BiCMOS platform. The fabricated p-n-p-based RF switches provide comparable RF performance to n-p-n-based switches. In terms of SET transient peaks and duration, the p-n-p SiGe HBT RF switches exhibit a significant reduction in SET sensitivity compared with their n-p-n counterparts. In the frequency domain, the p-n-p switches show fewer low-frequency spurs than that of the n-p-n switches. In addition, inverse-mode p-n-p SiGe HBT switches provide the best overall SET response among all RF SPST switches investigated. | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1109/TNS.2017.2780120 | - |
dc.identifier.scopusid | 2-s2.0-85037592055 | - |
dc.identifier.wosid | 000422920800053 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.65, no.1, pp 391 - 398 | - |
dc.citation.title | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.citation.volume | 65 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 391 | - |
dc.citation.endPage | 398 | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Nuclear Science & Technology | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
dc.subject.keywordPlus | HEAVY-ION | - |
dc.subject.keywordPlus | 2-PHOTON ABSORPTION | - |
dc.subject.keywordPlus | CHARGE COLLECTION | - |
dc.subject.keywordPlus | X-RAY | - |
dc.subject.keywordPlus | CMOS | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | LASER | - |
dc.subject.keywordPlus | IRRADIATION | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | SOI | - |
dc.subject.keywordAuthor | BiCMOS | - |
dc.subject.keywordAuthor | complementary SiGe (C-SiGe) | - |
dc.subject.keywordAuthor | inverse mode | - |
dc.subject.keywordAuthor | p-n-p | - |
dc.subject.keywordAuthor | pulsed laser | - |
dc.subject.keywordAuthor | radiation effects | - |
dc.subject.keywordAuthor | radiation hardening by design | - |
dc.subject.keywordAuthor | radio frequency RF switch | - |
dc.subject.keywordAuthor | RHBD | - |
dc.subject.keywordAuthor | silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) | - |
dc.subject.keywordAuthor | single-event transient (SET) | - |
dc.subject.keywordAuthor | single-pole single-throw (SPST) | - |
dc.subject.keywordAuthor | two-photon absorption (TPA) | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/8166761 | - |
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