p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform
- Authors
- Song, Ickhyun; Cho, Moon-Kyu; Fleetwood, Zachary E.; Gong, Yunyi; Pavlidis, Spyridon; Buchner, Stephen P.; McMorrow, Dale; Paki, Pauline; Kaynak, Mehmet; Cressler, John. D.
- Issue Date
- Jan-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- BiCMOS; complementary SiGe (C-SiGe); inverse mode; p-n-p; pulsed laser; radiation effects; radiation hardening by design; radio frequency RF switch; RHBD; silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs); single-event transient (SET); single-pole single-throw (SPST); two-photon absorption (TPA)
- Citation
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.65, no.1, pp 391 - 398
- Pages
- 8
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Volume
- 65
- Number
- 1
- Start Page
- 391
- End Page
- 398
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/190777
- DOI
- 10.1109/TNS.2017.2780120
- ISSN
- 0018-9499
1558-1578
- Abstract
- The benefits of using p-n-p silicon-germanium (SiGe) heterojuction bipolar transistors (HBTs) in radio frequency (RF) circuits for the mitigation of single-event transients (SETs) have been investigated. As a representative circuit example, p-n-p SiGe-HBT RF single-pole single-throw (SPST) switches have been designed in a complementary SiGe BiCMOS platform. The fabricated p-n-p-based RF switches provide comparable RF performance to n-p-n-based switches. In terms of SET transient peaks and duration, the p-n-p SiGe HBT RF switches exhibit a significant reduction in SET sensitivity compared with their n-p-n counterparts. In the frequency domain, the p-n-p switches show fewer low-frequency spurs than that of the n-p-n switches. In addition, inverse-mode p-n-p SiGe HBT switches provide the best overall SET response among all RF SPST switches investigated.
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