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A SiGe-BiCMOS Wideband Active Bidirectional Digital Step Attenuator With Bandwidth Tuning and Equalization

Authors
Cho, Moon-KyuSong, IckhyunFleetwood, Zachary E.Cressler, John D.
Issue Date
Aug-2018
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Active switch; BiCMOS; bidirectional amplifier (BDA); bidirectional operation; digital step attenuator (DSA); SiGe HBT; wideband phased-array antennas
Citation
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.66, no.8, pp 3866 - 3876
Pages
11
Indexed
SCI
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume
66
Number
8
Start Page
3866
End Page
3876
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/190779
DOI
10.1109/TMTT.2018.2830764
ISSN
0018-9480
1557-9670
Abstract
A 6-bit active digital step attenuator (DSA), which simultaneously achieves wide bandwidth, flat gain characteristics, and bidirectional operation, is proposed for wideband phased-array antennas. In addition, it supports bandwidth tuning and equalization function to reduce complexity and physical size of systems. The proposed circuit utilizes an active double-pole double-throw switch, which provides positive gain with four-way switching and bidirectional operation. In addition, the simplified switched T-type topologies are applied to improve the insertion loss and save on chip area for low-attenuation states (0.5, 1, and 2 dB). Implemented in a 130-nm SiGe-BiCMOS technology platform, the proposed active DSA provides the advantages of seamless integration with digital control blocks and wide operational bandwidth due to its low parasitic capacitance. The active DSA exhibits flat in-band gain of >7 dB and the input/output return losses <9 dB from 2 to 20 GHz, which covers S-, C-, X-, and Ku-bands. In addition, it shows the root-mean-square amplitude and phase errors of <0.3 dB and <3.4 degrees, respectively. The measured output 1-dB compression point is -3.6 dBm with a dc power consumption of 75 mW. The chip area of the active DSA is 1.43 x 1.23 mm(2), including pads.
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COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
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