Xe plus ion irradiation to boost NO2 sensing characteristics of SnO2 nanowiresXe+ ion irradiation to boost NO2 sensing characteristics of SnO2 nanowires
- Other Titles
- Xe+ ion irradiation to boost NO2 sensing characteristics of SnO2 nanowires
- Authors
- Oum, Wansik; Mirzaei, Ali; Shin, Ka Yoon; Kim, Eun Bi; Kim, Hyeong Min; Kim, Sang Sub; Kim, Hyoun Woo
- Issue Date
- Oct-2023
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- SnO2; Nanowires; NO 2 gas; Xe irradiation; Sensing mechanism
- Citation
- SENSORS AND ACTUATORS B-CHEMICAL, v.393, pp.1 - 14
- Indexed
- SCIE
SCOPUS
- Journal Title
- SENSORS AND ACTUATORS B-CHEMICAL
- Volume
- 393
- Start Page
- 1
- End Page
- 14
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/191252
- DOI
- 10.1016/j.snb.2023.134206
- ISSN
- 0925-4005
- Abstract
- In this paper, pristine and Xe+ ion-irradiated sensors are studied for NO2 sensing purposes. SnO2 nanowires (NWs) were synthesized via a simple growth method and irradiated with Xe+ ions at different doses (1014, 1015, and 1016 ions/cm2). The gas sensors were fabricated after different characterizations of morphology, phase, and chemical composition. The NO2 sensing experiments revealed that there was an optimal dose (1014 ions/cm2) for which the highest response to NO2 was achieved. At 200 degrees C, the optimal sensor had a high response of 27.32-10 ppm of NO2. Furthermore, the sensor demonstrated high selectivity to NO2 gas. The boosted gas response of the optimized sensor was due to the formation of n-n homojunctions between the SnO2-SnO2 NWs and the irradiation-induced formation of defects. This study confirms the usefulness of irradiation in boosting the sensing features of metal oxides.
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