An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology
- Authors
- Cho, Moon-Kyu; Song, Ickhyun; Pavlidis, Spyridon; Fleetwood, Zachary E.; Buchner, Stephen P.; McMorrow, Dale; Paki, Pauline; Cressler, John D.
- Issue Date
- Jan-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Electrostatic discharge (ESD); pulsed laser; SiGe BiCMOS; single-event effect (SEE); single-event transient (SET); two-photon absorption (TPA)
- Citation
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.65, no.1, pp.426 - 431
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON NUCLEAR SCIENCE
- Volume
- 65
- Number
- 1
- Start Page
- 426
- End Page
- 431
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/191468
- DOI
- 10.1109/TNS.2017.2778946
- ISSN
- 0018-9499
- Abstract
- The impact of electrostatic discharge (ESD) protection circuits on the single-event transients (SETs) of RF building blocks in a 130-nm SiGe BiCMOS (8HP) platform is investigated. For proof-of-concept that SET mitigation can be accomplished through the use of an ESD protection circuit, a single-pole single-throw (SPST) switch was implemented using triple-well nFETs. For substrate noise coupling suppression, a P+, P- substrate (Psub) and N-well guard ring structures were applied. According to two-photon absorption laser experiment results, the SPST switch with ESD protection exhibits the smallest transient peaks at the RF input/output and VDD ESD terminals. Based on these results, an SET mitigation strategy is proposed while maintaining the optimal circuit performance.
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