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Synthesis of Superior-Performance InGaZnO Based on Ideal Reaction of Plasma Enhanced Atomic Layer Deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Yoon-Seo | - |
| dc.contributor.author | Oh, Hye-Jin | - |
| dc.contributor.author | Kim, Junghwan | - |
| dc.contributor.author | Lim, Jun Hyung | - |
| dc.contributor.author | Park, Jin-Seong | - |
| dc.date.accessioned | 2023-11-14T08:08:09Z | - |
| dc.date.available | 2023-11-14T08:08:09Z | - |
| dc.date.issued | 2023-05 | - |
| dc.identifier.issn | 0097-966X | - |
| dc.identifier.issn | 2168-0159 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/192126 | - |
| dc.description.abstract | Based on moderating the reaction energy of plasma enhanced atomic layer deposition (PEALD), we fabricated a superior-performance InGaZnO transistor with the ultra-high field effect mobility over 100 cm2/Vs, absolute threshold voltage under 0.5 V, and subthreshold swing lower than 100 mV/decade. This study will be powerful basic of synthesizing the ALD-based oxide semiconductor for scaling down such as 3D integration applications. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.title | Synthesis of Superior-Performance InGaZnO Based on Ideal Reaction of Plasma Enhanced Atomic Layer Deposition | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1002/sdtp.16956 | - |
| dc.identifier.scopusid | 2-s2.0-85175330374 | - |
| dc.identifier.bibliographicCitation | Digest of Technical Papers - SID International Symposium, v.54, no.1, pp 1806 - 1809 | - |
| dc.citation.title | Digest of Technical Papers - SID International Symposium | - |
| dc.citation.volume | 54 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 1806 | - |
| dc.citation.endPage | 1809 | - |
| dc.type.docType | Conference paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | C. thin film transistor (TFT) | - |
| dc.subject.keywordPlus | High mobility | - |
| dc.subject.keywordPlus | Ideal reaction | - |
| dc.subject.keywordPlus | Indium gallium zinc oxide | - |
| dc.subject.keywordPlus | Performance | - |
| dc.subject.keywordPlus | Plasma enhanced atomic layer deposition | - |
| dc.subject.keywordPlus | Plasma-enhanced atomic layer deposition | - |
| dc.subject.keywordPlus | Thin-film transistor | - |
| dc.subject.keywordPlus | Ultra-high | - |
| dc.subject.keywordPlus | Ultra-high mobility | - |
| dc.subject.keywordAuthor | Ideal reaction | - |
| dc.subject.keywordAuthor | Indium gallium zinc oxide (IGZO) | - |
| dc.subject.keywordAuthor | Plasma enhanced atomic layer deposition (PEALD) | - |
| dc.subject.keywordAuthor | Thin-Film Transistors (TFTs) | - |
| dc.subject.keywordAuthor | Ultra-high mobility | - |
| dc.identifier.url | https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.16956 | - |
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)