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High-Performance Indium-Gallium Oxide Thin-Film-Transistors via Plasma-Enhanced Atomic-Layer-Deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hur, Jae Seok | - |
| dc.contributor.author | Kim, Min Jae | - |
| dc.contributor.author | Yoon, Seong Hun | - |
| dc.contributor.author | Jeong, Jae Kyeong | - |
| dc.date.accessioned | 2023-11-14T08:09:53Z | - |
| dc.date.available | 2023-11-14T08:09:53Z | - |
| dc.date.issued | 2023-05 | - |
| dc.identifier.issn | 0097-966X | - |
| dc.identifier.issn | 2168-0159 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/192135 | - |
| dc.description.abstract | We report the fabrication of high-performance indium-gallium oxide (IGO) thin-film transistors (TFTs) via plasma-enhanced atomic-layer-deposition (PE-ALD) process with cation composition ratio variation. With accurate control of the composition ratio, IGO(12:3) TFTs showed stable characteristics along with high field-effect mobility (μFET) of 70.69 cm2/Vs. Furthermore by increasing the gallium ratio, IGO(6:3) TFTs showed extremely stable characteristics with threshold voltage (VTH) variations lower than 0.1 V in both positive bias stress (PBS) and negative bias stress (NBS) conditions. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.title | High-Performance Indium-Gallium Oxide Thin-Film-Transistors via Plasma-Enhanced Atomic-Layer-Deposition | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1002/sdtp.16962 | - |
| dc.identifier.scopusid | 2-s2.0-85175309698 | - |
| dc.identifier.bibliographicCitation | Digest of Technical Papers - SID International Symposium, v.54, no.1, pp 1826 - 1828 | - |
| dc.citation.title | Digest of Technical Papers - SID International Symposium | - |
| dc.citation.volume | 54 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 1826 | - |
| dc.citation.endPage | 1828 | - |
| dc.type.docType | Conference paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Atoms | - |
| dc.subject.keywordPlus | Field effect transistors | - |
| dc.subject.keywordPlus | Gallium compounds | - |
| dc.subject.keywordPlus | MOS devices | - |
| dc.subject.keywordPlus | Oxide semiconductors | - |
| dc.subject.keywordPlus | Positive ions | - |
| dc.subject.keywordPlus | Semiconducting indium compounds | - |
| dc.subject.keywordPlus | Thin film circuits | - |
| dc.subject.keywordPlus | Thin film transistors | - |
| dc.subject.keywordPlus | Thin films | - |
| dc.subject.keywordPlus | Threshold voltage | - |
| dc.subject.keywordAuthor | atomic layer deposition | - |
| dc.subject.keywordAuthor | cation composition | - |
| dc.subject.keywordAuthor | indium gallium oxide | - |
| dc.subject.keywordAuthor | Oxide semiconductor | - |
| dc.subject.keywordAuthor | thin-film transistor | - |
| dc.identifier.url | https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.16962 | - |
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)