Stabilization of the tetragonal phase in ZrO<sub>2</sub> thin films according to ozone concentration using atomic layer deposition
DC Field | Value | Language |
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dc.contributor.author | Song, Seokhwi | - |
dc.contributor.author | Kim, Eungju | - |
dc.contributor.author | Kim, Kyunghoo | - |
dc.contributor.author | Bae, Jangho | - |
dc.contributor.author | Lee, Jinho | - |
dc.contributor.author | Jung, Chang Hwa | - |
dc.contributor.author | Lim, Hanjin | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2023-11-14T08:16:50Z | - |
dc.date.available | 2023-11-14T08:16:50Z | - |
dc.date.created | 2023-10-30 | - |
dc.date.issued | 2023-12 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/192183 | - |
dc.description.abstract | In this study, we investigated the crystallographic and electrical properties of ZrO2 thin films prepared by an ozone-based atomic layer deposition process. Cyclopentadienyl tris(dimethylamino) zirconium [CpZr(NMe2)(3)] was used as the Zr precursor, and O-3 was used as the reactant. ZrO2 films were produced using O-3 in various concentrations from 100 to 400 g/m(3). These thin films were used to fabricate metal-oxide-semiconductor capacitors, whose electrical properties were evaluated and correlated with crystallographic analysis. As the O-3 concentration increased, the tetragonal phase of the ZrO2 film stabilized and the dielectric constant improved. However, the leakage current density characteristics concurrently deteriorated due to the high concentration of O-3, increasing the number of grain boundaries in the ZrO2 film by increasing crystallinity. Thus, the concentration of O-3 can control the number of OH groups of the ZrO2 film, affecting the device characteristics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Stabilization of the tetragonal phase in ZrO<sub>2</sub> thin films according to ozone concentration using atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1116/6.0002901 | - |
dc.identifier.scopusid | 2-s2.0-85174277387 | - |
dc.identifier.wosid | 001081087100001 | - |
dc.identifier.bibliographicCitation | Journal of Vacuum Science and Technology A, v.41, no.6, pp.1 - 6 | - |
dc.relation.isPartOf | Journal of Vacuum Science and Technology A | - |
dc.citation.title | Journal of Vacuum Science and Technology A | - |
dc.citation.volume | 41 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DIELECTRIC-CONSTANT | - |
dc.subject.keywordPlus | SILICON | - |
dc.identifier.url | https://pubs.aip.org/avs/jva/article/41/6/062404/2915889/Stabilization-of-the-tetragonal-phase-in-ZrO2-thin | - |
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