(Invited) Recent Progress in Metal Oxide TFTs using Atomic Layer Deposition

Abstract

This paper reviews recent approaches in the development of high-performance metal-oxide thin-film transistors (TFTs) through atomic-layer deposition (ALD) process. Since metal-oxide TFTs are contributing as one of the main backplane technology for display products such as organic light-emitting diode (OLED) televisions, further improvements are aggressively attempted in various approaches. Among them, two mainstream approaches including cation composition ratio variation and novel structural design is introduced. Both approaches are enabled by extensive merits of the ALD process compared to the conventional sputtering process. In this paper, state-of-the-art characteristics of ALD deposited oxide semiconductors are described. Results show promising potential for ALD-derived metal oxide TFTs as a future candidate for next generation high-end active-matrix display devices.