Enhancement of InGaZnO Thin-Film Transistors by Contact Barrier Modulation Using Oxygen Defects
DC Field | Value | Language |
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dc.contributor.author | Kim, Taeyoung | - |
dc.contributor.author | Kim, Yoonsok | - |
dc.contributor.author | Ahn, Juntae | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.date.accessioned | 2023-11-14T08:35:33Z | - |
dc.date.available | 2023-11-14T08:35:33Z | - |
dc.date.created | 2023-08-01 | - |
dc.date.issued | 2023-07 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/192293 | - |
dc.description.abstract | We have studied the effect of barrier-controlled electrodesoncharacteristics of amorphous InGaZnO (a-IGZO) thin-film transistors(TFTs) using an interlayer with modulated oxygen defects. Interlayersof a-IGZO with different electrical resistivities were controlledwith various oxygen ratios during the RF sputtering deposition. Asthe ratio of O-2/(O-2 + Ar) was increased from0 to 20%, the carrier concentration decreased from 2.84 x 10(18) to 1.56 x 10(14) cm(-3) andthe electrical resistivity increased from 0.12 to 9600 & omega;& BULL;cm.Using this result, a-IGZO thin layers with different resistivities(low and high) to control the contact barriers were inserted betweenthe a-IGZO TFT channel and both the source and drain electrodes. Inthe case of a-IGZO TFT with a low resistivity interlayer, the thresholdvoltage (V (th)) was shifted by -4.1V compared to the reference device without an interlayer. In addition,on/off ratio, the subthreshold swing, and the mobility of the deviceswere also enhanced by achieving Ohmic contact. In contrast, the a-IGZOTFT with a high resistivity interlayer showed a positive V (th) shift of 1.5 V and also improved device performance,while maintaining a mobility of ∼84% of the reference device due to the energy barrier. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Enhancement of InGaZnO Thin-Film Transistors by Contact Barrier Modulation Using Oxygen Defects | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1021/acsaelm.3c00508 | - |
dc.identifier.scopusid | 2-s2.0-85165924424 | - |
dc.identifier.wosid | 001027008800001 | - |
dc.identifier.bibliographicCitation | ACS APPLIED ELECTRONIC MATERIALS, v.5, no.7, pp.3772 - 3779 | - |
dc.relation.isPartOf | ACS APPLIED ELECTRONIC MATERIALS | - |
dc.citation.title | ACS APPLIED ELECTRONIC MATERIALS | - |
dc.citation.volume | 5 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 3772 | - |
dc.citation.endPage | 3779 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERISTICS | - |
dc.subject.keywordPlus | IGZO-TFTS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordAuthor | oxide semiconductor | - |
dc.subject.keywordAuthor | thin-film transistors | - |
dc.subject.keywordAuthor | contact engineering | - |
dc.subject.keywordAuthor | homojunction-structured interlayer | - |
dc.subject.keywordAuthor | contact barrier modulation | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsaelm.3c00508 | - |
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