Enhancement of InGaZnO Thin-Film Transistors by Contact Barrier Modulation Using Oxygen Defects
- Authors
- Kim, Taeyoung; Kim, Yoonsok; Ahn, Juntae; Kim, Eun Kyu
- Issue Date
- Jul-2023
- Publisher
- AMER CHEMICAL SOC
- Keywords
- oxide semiconductor; thin-film transistors; contact engineering; homojunction-structured interlayer; contact barrier modulation
- Citation
- ACS APPLIED ELECTRONIC MATERIALS, v.5, no.7, pp.3772 - 3779
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED ELECTRONIC MATERIALS
- Volume
- 5
- Number
- 7
- Start Page
- 3772
- End Page
- 3779
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/192293
- DOI
- 10.1021/acsaelm.3c00508
- ISSN
- 2637-6113
- Abstract
- We have studied the effect of barrier-controlled electrodesoncharacteristics of amorphous InGaZnO (a-IGZO) thin-film transistors(TFTs) using an interlayer with modulated oxygen defects. Interlayersof a-IGZO with different electrical resistivities were controlledwith various oxygen ratios during the RF sputtering deposition. Asthe ratio of O-2/(O-2 + Ar) was increased from0 to 20%, the carrier concentration decreased from 2.84 x 10(18) to 1.56 x 10(14) cm(-3) andthe electrical resistivity increased from 0.12 to 9600 & omega;& BULL;cm.Using this result, a-IGZO thin layers with different resistivities(low and high) to control the contact barriers were inserted betweenthe a-IGZO TFT channel and both the source and drain electrodes. Inthe case of a-IGZO TFT with a low resistivity interlayer, the thresholdvoltage (V (th)) was shifted by -4.1V compared to the reference device without an interlayer. In addition,on/off ratio, the subthreshold swing, and the mobility of the deviceswere also enhanced by achieving Ohmic contact. In contrast, the a-IGZOTFT with a high resistivity interlayer showed a positive V (th) shift of 1.5 V and also improved device performance,while maintaining a mobility of ∼84% of the reference device due to the energy barrier.
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