Investigating charge traps in MoTe2field-effect transistors: SiO2insulator traps and MoTe2bulk traps
DC Field | Value | Language |
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dc.contributor.author | Kim, Giheon | - |
dc.contributor.author | Dang, Dang Xuan | - |
dc.contributor.author | Gul, Hamza Zad | - |
dc.contributor.author | Ji, Hyunjin | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Lim, Seong Chu | - |
dc.date.accessioned | 2023-11-24T03:07:26Z | - |
dc.date.available | 2023-11-24T03:07:26Z | - |
dc.date.created | 2023-11-14 | - |
dc.date.issued | 2024-01 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/192901 | - |
dc.description.abstract | Two-dimensional material-based field-effect transistors are promising for future use in electronic and optoelectronic applications. However, trap states existing in the transistors are known to hinder device performance. They capture/release carriers in the channel and lead to hysteresis in the transfer characteristics. In this work, we fabricated MoTe2field-effect transistors on two different gate dielectrics, SiO2and h-BN, and investigated temperature-dependent charge trapping behavior on the hysteresis in their transfer curves. We observed that devices with SiO2back-gate dielectric are affected by both SiO2insulator traps and MoTe2intrinsic bulk traps, with the latter becoming prominent at temperatures above 310 K. Conversely, devices with h-BN back-gate dielectric, which host a negligible number of insulator traps, primarily exhibit MoTe2bulk traps at high temperatures, enabling us to estimate the trap energy level at 389 meV below the conduction band edge. A similar energy level of 396 meV below the conduction band edge was observed from the emission current transient measurement. From a previous computational study, we expect these trap states to be the tellurium vacancy. Our results suggest that charge traps in MoTe2field-effect transistors can be reduced by careful selection of gate insulators, thus providing guidelines for device fabrication. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | Investigating charge traps in MoTe2field-effect transistors: SiO2insulator traps and MoTe2bulk traps | - |
dc.title.alternative | Investigating charge traps in MoTe2 field-effect transistors: SiO2 insulator traps and MoTe2 bulk traps | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.1088/1361-6528/ad0126 | - |
dc.identifier.scopusid | 2-s2.0-85175585416 | - |
dc.identifier.wosid | 001094120100001 | - |
dc.identifier.bibliographicCitation | Nanotechnology, v.35, no.3, pp.1 - 9 | - |
dc.relation.isPartOf | Nanotechnology | - |
dc.citation.title | Nanotechnology | - |
dc.citation.volume | 35 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | HYSTERESIS | - |
dc.subject.keywordPlus | NOISE | - |
dc.subject.keywordAuthor | hysteresis | - |
dc.subject.keywordAuthor | MoTe2 | - |
dc.subject.keywordAuthor | transient current | - |
dc.subject.keywordAuthor | trap states | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/1361-6528/ad0126 | - |
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