Investigating charge traps in MoTe2field-effect transistors: SiO2insulator traps and MoTe2bulk trapsInvestigating charge traps in MoTe2 field-effect transistors: SiO2 insulator traps and MoTe2 bulk traps
- Other Titles
- Investigating charge traps in MoTe2 field-effect transistors: SiO2 insulator traps and MoTe2 bulk traps
- Authors
- Kim, Giheon; Dang, Dang Xuan; Gul, Hamza Zad; Ji, Hyunjin; Kim, Eun Kyu; Lim, Seong Chu
- Issue Date
- Jan-2024
- Publisher
- IOP Publishing Ltd
- Keywords
- hysteresis; MoTe2; transient current; trap states
- Citation
- Nanotechnology, v.35, no.3, pp.1 - 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- Nanotechnology
- Volume
- 35
- Number
- 3
- Start Page
- 1
- End Page
- 9
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/192901
- DOI
- 10.1088/1361-6528/ad0126
- ISSN
- 0957-4484
- Abstract
- Two-dimensional material-based field-effect transistors are promising for future use in electronic and optoelectronic applications. However, trap states existing in the transistors are known to hinder device performance. They capture/release carriers in the channel and lead to hysteresis in the transfer characteristics. In this work, we fabricated MoTe2field-effect transistors on two different gate dielectrics, SiO2and h-BN, and investigated temperature-dependent charge trapping behavior on the hysteresis in their transfer curves. We observed that devices with SiO2back-gate dielectric are affected by both SiO2insulator traps and MoTe2intrinsic bulk traps, with the latter becoming prominent at temperatures above 310 K. Conversely, devices with h-BN back-gate dielectric, which host a negligible number of insulator traps, primarily exhibit MoTe2bulk traps at high temperatures, enabling us to estimate the trap energy level at 389 meV below the conduction band edge. A similar energy level of 396 meV below the conduction band edge was observed from the emission current transient measurement. From a previous computational study, we expect these trap states to be the tellurium vacancy. Our results suggest that charge traps in MoTe2field-effect transistors can be reduced by careful selection of gate insulators, thus providing guidelines for device fabrication.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/192901)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.