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Hysteresis-Free Like, High Mobility p-Channel Tin Monoxide Thin-Film Transistor
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Taikyu | - |
| dc.contributor.author | Kim, Se Eun | - |
| dc.contributor.author | Jeong, Jae Kyeong | - |
| dc.date.accessioned | 2023-11-24T04:44:38Z | - |
| dc.date.available | 2023-11-24T04:44:38Z | - |
| dc.date.issued | 2022-12 | - |
| dc.identifier.issn | 1883-2490 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/192915 | - |
| dc.description.abstract | We demonstrate high mobility p-channel tin monoxide (SnO) thin-film transistors with hysteresis free-like behavior. Intermediate alumina encapsulation in the middle of two postdeposition annealing processes significantly facilitates crystal growth, enabling considerable intertwining between crystals. Here, we report a simple method crystallizing the SnO thin-film. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.title | Hysteresis-Free Like, High Mobility p-Channel Tin Monoxide Thin-Film Transistor | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.36463/idw.2022.0223 | - |
| dc.identifier.scopusid | 2-s2.0-85175250734 | - |
| dc.identifier.bibliographicCitation | Proceedings of the International Display Workshops, v.29, pp 223 - 225 | - |
| dc.citation.title | Proceedings of the International Display Workshops | - |
| dc.citation.volume | 29 | - |
| dc.citation.startPage | 223 | - |
| dc.citation.endPage | 225 | - |
| dc.type.docType | Conference paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Annealing process | - |
| dc.subject.keywordPlus | C. thin film transistor (TFT) | - |
| dc.subject.keywordPlus | High mobility | - |
| dc.subject.keywordPlus | Hysteresis free | - |
| dc.subject.keywordPlus | P channels | - |
| dc.subject.keywordPlus | P-type oxide semiconductors | - |
| dc.subject.keywordPlus | Post deposition annealing | - |
| dc.subject.keywordPlus | SIMPLE method | - |
| dc.subject.keywordPlus | Thin-films | - |
| dc.subject.keywordPlus | Tin monoxides | - |
| dc.subject.keywordAuthor | high mobility | - |
| dc.subject.keywordAuthor | hysteresis-free | - |
| dc.subject.keywordAuthor | p-type oxide semiconductor | - |
| dc.subject.keywordAuthor | thin-film transistor | - |
| dc.subject.keywordAuthor | tin monoxide | - |
| dc.identifier.url | https://confit.atlas.jp/guide/organizer/idw/idw2022/subject/AMDp1-08/search?searchType=only&initFlg=false&query=&title=Hysteresis&author=&affiliation= | - |
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