Transfer of a Well-Aligned TiO2 Nanorod Array onto GaN-Based LEDs for Light Extraction Enhancement
- Authors
- Kim, Dohyun; Jung, Uijin; Shin, Dongsu; Heo, Wonjun; Park, Wanjun; Park, Jinsub
- Issue Date
- Aug-2023
- Publisher
- AMER CHEMICAL SOC
- Citation
- JOURNAL OF PHYSICAL CHEMISTRY C, v.127, no.34, pp.17078 - 17084
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICAL CHEMISTRY C
- Volume
- 127
- Number
- 34
- Start Page
- 17078
- End Page
- 17084
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/192951
- DOI
- 10.1021/acs.jpcc.3c02537
- ISSN
- 1932-7447
- Abstract
- We report on the application of a transferable titaniumdioxidenanorod (TiO2 NR) array as a light extraction booster forGaN-based light-emitting diodes (LEDs). A chemical lift-off processwas used to create a self-separating TiO2 NRs array, whichwas achieved during growth of TiO2 NRs on a nickel (Ni)-metal-coatedSi substrate. The array was transferred onto the topmost layer ofthe LED chip. The TiO2 NR array/LEDs show the 66% enhancementof light output power (LOP) intensity compared with the referenceLEDs at a fixed injection current of 100 mA. The transferable TiO2 NR array formed on the LEDs is a very effective structureto increase light extraction by reduction of backward reflectionsof photons emitted from LEDs. Our suggested simple and practical methodsuggested by our team to facilitate self-separation of the transferableTiO(2) NRs array can be applied on various substrates foroptoelectronic devices without additional damage or degradation ofdevice performance.
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