High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition
DC Field | Value | Language |
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dc.contributor.author | Yoo, Kwang Su | - |
dc.contributor.author | Lee, Chi-Hoon | - |
dc.contributor.author | Kim, Dong-Gyu | - |
dc.contributor.author | Choi, Su-Hwan | - |
dc.contributor.author | Lee, Won-Bum | - |
dc.contributor.author | Park, Chang-Kyun | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2023-12-11T07:31:57Z | - |
dc.date.available | 2023-12-11T07:31:57Z | - |
dc.date.issued | 2024-02 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.issn | 1873-5584 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193267 | - |
dc.description.abstract | We fabricate In2O3 films using atmospheric pressure spatial atomic layer deposition (AP S-ALD) and investigate their properties at various temperatures (150 °C–225 °C). As the temperature increased, the growth per cycle (GPC) increases, with the GPC and refractive index reaching values of 1.33 and 2.02, respectively, at 225 °C. The In2O3 thin film indicates a reduction in carrier concentration from 1.53 ± 1.37 × 1021 to 3.09 ± 0.53 × 1020 cm−3 as the temperature increased, and a decrease in the resistance from 3.55 ± 0.07 × 10−3 to 3.70 ± 0.01 × 10−4 Ω∙cm, which is attributed to a decrease in the impurity concentration (150 °C: 1.5 at.%; 175 °C: 1.0 at.%; 200 °C: N/A; 225 °C: N/A) and an increase in crystallinity. We use the In2O3 film as a channel layer in a top-gate bottom-contact thin-film transistor (TG-BC TFT). The device shows excellent performance characteristics, including a field-effect mobility of 69.8 cm2/V·s, a threshold voltage of −0.06 ± 0.22 V, and a subthreshold swing of 0.16 ± 0.01 V/decade. We successfully fabricated high-mobility TFTs and demonstrated their reliability via bias and 50,000 bending tests. The high-performance channel layer of the TFTs fabricated using AP S-ALD are promising for flexible applications. | - |
dc.format.extent | 9 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | Elsevier B.V. | - |
dc.title | High mobility and productivity of flexible In2O3 thin-film transistors on polyimide substrates via atmospheric pressure spatial atomic layer deposition | - |
dc.type | Article | - |
dc.publisher.location | 네델란드 | - |
dc.identifier.doi | 10.1016/j.apsusc.2023.158950 | - |
dc.identifier.scopusid | 2-s2.0-85177754361 | - |
dc.identifier.bibliographicCitation | Applied Surface Science, v.646, pp 1 - 9 | - |
dc.citation.title | Applied Surface Science | - |
dc.citation.volume | 646 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Atmospheric pressure | - |
dc.subject.keywordPlus | Atmospheric temperature | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordPlus | Atoms | - |
dc.subject.keywordPlus | Bending tests | - |
dc.subject.keywordPlus | Carrier concentration | - |
dc.subject.keywordPlus | Crystallinity | - |
dc.subject.keywordPlus | Field effect transistors | - |
dc.subject.keywordPlus | MOS devices | - |
dc.subject.keywordPlus | Oxide semiconductors | - |
dc.subject.keywordPlus | Refractive index | - |
dc.subject.keywordPlus | Substrates | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Threshold voltage | - |
dc.subject.keywordAuthor | Atmospheric spatial atomic layer deposition (AP S-ALD) | - |
dc.subject.keywordAuthor | In<sub>2</sub>O<sub>3</sub> | - |
dc.subject.keywordAuthor | oxide semiconductor thin film transistors (TFTs) | - |
dc.subject.keywordAuthor | Process parameters | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433223026302?via%3Dihub | - |
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