Quantitative photon-probe evaluation of trap-containing channel/dielectric interface in organic field effect transistors
DC Field | Value | Language |
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dc.contributor.author | Lee, Kimoon | - |
dc.contributor.author | Lee, Byoung H. | - |
dc.contributor.author | Lee, Kwang H. | - |
dc.contributor.author | Park, Ji Hoon | - |
dc.contributor.author | Sung, Myung M. | - |
dc.contributor.author | Im, Seongil | - |
dc.date.accessioned | 2024-01-10T02:06:03Z | - |
dc.date.available | 2024-01-10T02:06:03Z | - |
dc.date.issued | 2010-04 | - |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.issn | 1364-5501 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193889 | - |
dc.description.abstract | We report on photo-excited trap-charge-collection spectroscopy as a direct probe of the traps in organic field-effect transistors (OFETs). Monochromatic photon beams transmitted through the working channels of 5 V operating pentacene-OFETs with 60 nm thick Al2O3 dielectrics liberate interface charges trapped at the matched energy level while the oxide surfaces were prepared with various self-assembled monolayers (SAMs). The density of states (DOS) of traps is directly mapped as a function of the photon energy by tracking the change in the threshold voltage. While conventional electrical stability measurements qualitatively support our trap DOS spectroscopy results, our direct measurement technique provides a powerful tool for quantitative analysis of the nature and density of interfacial traps in field-effect transistor devices. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Quantitative photon-probe evaluation of trap-containing channel/dielectric interface in organic field effect transistors | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1039/b921636g | - |
dc.identifier.scopusid | 2-s2.0-77949494549 | - |
dc.identifier.wosid | 000275662400017 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY, v.20, no.13, pp 2659 - 2663 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.citation.volume | 20 | - |
dc.citation.number | 13 | - |
dc.citation.startPage | 2659 | - |
dc.citation.endPage | 2663 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | Electron energy levels | - |
dc.subject.keywordPlus | Organic field effect transistors | - |
dc.subject.keywordPlus | Photons | - |
dc.subject.keywordPlus | Probes | - |
dc.subject.keywordPlus | Self assembled monolayers | - |
dc.subject.keywordPlus | Density of state | - |
dc.subject.keywordPlus | Direct measurement | - |
dc.subject.keywordPlus | Direct probe | - |
dc.subject.keywordPlus | Electrical stability | - |
dc.subject.keywordPlus | Energy level | - |
dc.subject.keywordPlus | In-field | - |
dc.subject.keywordPlus | Interface charge | - |
dc.subject.keywordPlus | Interfacial traps | - |
dc.subject.keywordPlus | Oxide surface | - |
dc.subject.keywordPlus | Pentacenes | - |
dc.subject.keywordPlus | Photon beams | - |
dc.subject.keywordPlus | Photon energy | - |
dc.subject.keywordPlus | Quantitative analysis | - |
dc.subject.keywordPlus | Field effect transistors | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2010/JM/b921636g | - |
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