Quantitative photon-probe evaluation of trap-containing channel/dielectric interface in organic field effect transistors
- Authors
- Lee, Kimoon; Lee, Byoung H.; Lee, Kwang H.; Park, Ji Hoon; Sung, Myung M.; Im, Seongil
- Issue Date
- Apr-2010
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, v.20, no.13, pp 2659 - 2663
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JOURNAL OF MATERIALS CHEMISTRY
- Volume
- 20
- Number
- 13
- Start Page
- 2659
- End Page
- 2663
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193889
- DOI
- 10.1039/b921636g
- ISSN
- 0959-9428
1364-5501
- Abstract
- We report on photo-excited trap-charge-collection spectroscopy as a direct probe of the traps in organic field-effect transistors (OFETs). Monochromatic photon beams transmitted through the working channels of 5 V operating pentacene-OFETs with 60 nm thick Al2O3 dielectrics liberate interface charges trapped at the matched energy level while the oxide surfaces were prepared with various self-assembled monolayers (SAMs). The density of states (DOS) of traps is directly mapped as a function of the photon energy by tracking the change in the threshold voltage. While conventional electrical stability measurements qualitatively support our trap DOS spectroscopy results, our direct measurement technique provides a powerful tool for quantitative analysis of the nature and density of interfacial traps in field-effect transistor devices.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 화학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193889)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.