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Low-voltage pentacene transistor inverters using micro-contact printed nano-layer

Authors
Lee, Kwang H.Oh, Min SukLee, Byoung H.Sung, Myung M.Im, Seongil
Issue Date
Jan-2010
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY, v.20, no.4, pp 663 - 665
Pages
3
Indexed
SCI
SCIE
SCOPUS
Journal Title
JOURNAL OF MATERIALS CHEMISTRY
Volume
20
Number
4
Start Page
663
End Page
665
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193892
DOI
10.1039/b922675c
ISSN
0959-9428
1364-5501
Abstract
We report on low-voltage inverters with two pentacene-based thin-film transistors (TFTs), one of which has been fabricated on a dielectric surface selected by micro-contact printing (mu CP). When a self-assembled monolayer (SAM) of 7-octenyltrichlorosilane (7-OTS) was printed on AlOx dielectric oxide, the TFT with the mu CP-SAM displayed a large threshold voltage (V-th) shift (3 V shift under -5 V operation), increased device current, and clearly changed pentacene surface morphology as compared to those of the other TFT without mu CP-SAM. Those results are attributed to the 7-OTS-modified pentacene/AlOx interface. Our inverter, composed of two TFTs with and without mu CP-SAM, shows a high gain of similar to 50 at a supply voltage (V-DD) of -20 V.
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