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Atomic-Scale Investigation of the Ti/Al(001) Interface: A Molecular Dynamics Simulation
- Issue Date
- Jun-2010
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.6, pp 1 - 3
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 49
- Number
- 6
- Start Page
- 1
- End Page
- 3
- ISSN
- 0021-4922
1347-4065
- Abstract
- The intermixing characteristics of Ti thin film deposited on Al(001) substrate at atomic level were investigated by molecular dynamics simulation. The intermixing at Ti/Al(001) interface was limited within only the topmost layer of the Al( 001) substrate at 300 K with 0.1 eV incident energy of a Ti atom. The mixing characteristics for Ti/Al( 001) such as layer coverage function and mixing length were significantly different from those of the transition metals (TM; Fe, Co, and Ni)/Al(001) systems. The different intermixing behavior can be explained in terms of local acceleration and incorporation energy barrier.
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Related Researcher
- Chung, Yong Chae
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)