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Picosecond Carrier Recombination of Single-Crystalline GaN Nanorods Grown on Si(111) Substrates
- Authors
- Tackeuchi, Atsushi; Yoo, Chan Ho; Kim, Tae Whan; Kwon, Young Hae; Kang, Tae Won; Nukui, Takao; Fujita, Taisuke; Nakazato, Yoshiaki; Saeki, Yu; Izumi, Sotaro
- Issue Date
- Jul-2010
- Publisher
- IOP Publishing Ltd
- Citation
- Japanese Journal of Applied Physics, v.49, no.7, pp 1 - 3
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 49
- Number
- 7
- Start Page
- 1
- End Page
- 3
- ISSN
- 0021-4922
1347-4065
- Abstract
- Time-resolved photoluminescence measurement was performed on one-dimensional GaN nanorods with c-axis-oriented single-crystalline wurtzite structures. The GaN nanorods were grown on Si(111) substrates by an improved hydride vapor phase epitaxy without a catalyst. Fast carrier recombinations of less than 10 ps were observed. The short recombination times of the GaN nanorods with few defects show the presence of nonradiative fast recombinations at the surface and interface.
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