Growth and Characterization of High Quality a-Plane InGaN/GaN Single Quantum Well Structure Grown by Multibuffer Layer Technique
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Song, Hooyoung | - |
dc.contributor.author | Kim, Jin Soak | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Seo, Yong Gon | - |
dc.contributor.author | Hwang, Sung-Min | - |
dc.date.accessioned | 2024-01-10T02:06:05Z | - |
dc.date.available | 2024-01-10T02:06:05Z | - |
dc.date.issued | 2010-04 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.issn | 1347-4065 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193906 | - |
dc.description.abstract | Nonpolar ( 11 (2) over bar0) a-plane InGaN/GaN single quantum well (SQW) structure has been grown using a multi buffer layer on a (1 (1) over bar 02) r-plane sapphire substrate. The effects on the lattice constants of the a-plane GaN template caused by reactor pressure and V/III ratio of the first buffer layer were studied to improve the crystal quality. Under optimum growth conditions, the full widths at half maximum (FWHMs) of ( 11 (2) over bar0) X-ray rocking curves along the c- and m-axis orientations were 430 and 530 arcsec, respectively. The optical characteristics of the nonpolar InGaN SQW determined from excitation-power-dependent photoluminescence and temperature-dependent photoluminescence spectra showed the absence of the quantum-confined Stark effect. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.title | Growth and Characterization of High Quality a-Plane InGaN/GaN Single Quantum Well Structure Grown by Multibuffer Layer Technique | - |
dc.type | Article | - |
dc.publisher.location | 일본 | - |
dc.identifier.doi | 10.1143/JJAP.49.04DH03 | - |
dc.identifier.scopusid | 2-s2.0-77952739215 | - |
dc.identifier.wosid | 000277301300149 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.4, pp 1 - 3 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 49 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 3 | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SAPPHIRE | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.49.04DH03 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.