Growth and Characterization of High Quality a-Plane InGaN/GaN Single Quantum Well Structure Grown by Multibuffer Layer Technique

Abstract

Nonpolar ( 11 (2) over bar0) a-plane InGaN/GaN single quantum well (SQW) structure has been grown using a multi buffer layer on a (1 (1) over bar 02) r-plane sapphire substrate. The effects on the lattice constants of the a-plane GaN template caused by reactor pressure and V/III ratio of the first buffer layer were studied to improve the crystal quality. Under optimum growth conditions, the full widths at half maximum (FWHMs) of ( 11 (2) over bar0) X-ray rocking curves along the c- and m-axis orientations were 430 and 530 arcsec, respectively. The optical characteristics of the nonpolar InGaN SQW determined from excitation-power-dependent photoluminescence and temperature-dependent photoluminescence spectra showed the absence of the quantum-confined Stark effect.