Growth and Characterization of High Quality a-Plane InGaN/GaN Single Quantum Well Structure Grown by Multibuffer Layer Technique
- Authors
- Song, Hooyoung; Kim, Jin Soak; Kim, Eun Kyu; Seo, Yong Gon; Hwang, Sung-Min
- Issue Date
- Apr-2010
- Publisher
- JAPAN SOC APPLIED PHYSICS
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.4, pp 1 - 3
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 49
- Number
- 4
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193906
- DOI
- 10.1143/JJAP.49.04DH03
- ISSN
- 0021-4922
1347-4065
- Abstract
- Nonpolar ( 11 (2) over bar0) a-plane InGaN/GaN single quantum well (SQW) structure has been grown using a multi buffer layer on a (1 (1) over bar 02) r-plane sapphire substrate. The effects on the lattice constants of the a-plane GaN template caused by reactor pressure and V/III ratio of the first buffer layer were studied to improve the crystal quality. Under optimum growth conditions, the full widths at half maximum (FWHMs) of ( 11 (2) over bar0) X-ray rocking curves along the c- and m-axis orientations were 430 and 530 arcsec, respectively. The optical characteristics of the nonpolar InGaN SQW determined from excitation-power-dependent photoluminescence and temperature-dependent photoluminescence spectra showed the absence of the quantum-confined Stark effect.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193906)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.