Nonvolatile Memory Effects of ZnO Nanoparticles Embedded in an Amorphous Carbon Layer
- Authors
- Li, Fushan; Shakerzadeh, Maziar; Tay, Bengkang; Guo, Tailiang; Kim, Taewhan
- Issue Date
- Jul-2010
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.7, pp 1 - 3
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 49
- Number
- 7
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/193909
- DOI
- 10.1143/JJAP.49.070209
- ISSN
- 0021-4922
1347-4065
- Abstract
- Nonvolatile memory devices utilizing ZnO nanoparticles (NPs) embedded in an amorphous carbon (a-C) dielectric layer were investigated by capacitance-voltage (C-V) measurements. C-V curves for the Al/ZnO NPs embedded in an amorphous carbon layer/SiO2/p-Si capacitor at 298 K showed a clockwise hysteresis with flat band voltage shift due to charge trapping in the ZnO NPs. Capacitance-time measurements showed that the devices exhibited excellent memory retention ability under ambient conditions. Operating mechanism for the memory devices was proposed based on the C-V results.
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