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Construction of Cyclic Redundancy Check Codes for SDDC Decoding in DRAM Systems

Authors
Kim, JihoKwon, Soonhee노재상Shin, Dong-Joon
Issue Date
Feb-2023
Publisher
Institute of Electrical and Electronics Engineers
Keywords
Random access memory; Generators; Decoding; Codes; Error correction codes; Cyclic redundancy check codes; Servers; Cyclic redundancy check (CRC); DRAM systems; error-correction codes; generator polynomial; Reed-Solomon (RS) codes; single device data correction (SDDC)
Citation
IEEE Transactions on Circuits and Systems II: Express Briefs, v.70, no.2, pp 736 - 740
Pages
5
Indexed
SCIE
SCOPUS
Journal Title
IEEE Transactions on Circuits and Systems II: Express Briefs
Volume
70
Number
2
Start Page
736
End Page
740
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/194199
DOI
10.1109/TCSII.2022.3175066
ISSN
1549-7747
1558-3791
Abstract
Single device data correction (SDDC) is a main reliability, availability, and serviceability feature of DRAM systems in servers due to the significant hard-failure rate associated with DRAM devices. To correct errors in one DRAM device, error pattern is determined by even parity bits and error location is determined by the error pattern and cyclic redundancy check (CRC) bits in SDDC decoding. In this brief, a SDDC decoding scheme is proposed, which improves the error-correction performance by uniquely determining the error location. For that purpose, requirements for binary CRC generator polynomials to uniquely determine the error location are derived. Based on these requirements, a systematic method for constructing CRC generator polynomials is proposed, which guarantees 100% error-correction rate. Finally, it is confirmed that the proposed SDDC decoding scheme has lower decoding complexity compared with various ECC schemes and also shows 100% SDDC decoding success through simulation.
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COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
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