High performance a-InZnSnO thin-film transistor with a self-diffusion-barrier formable copper contact
DC Field | Value | Language |
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dc.contributor.author | Lee, Sang Ho | - |
dc.contributor.author | Oh, Dong Ju | - |
dc.contributor.author | Hwang, Ah Young | - |
dc.contributor.author | Park, Jong Wan | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2021-08-02T14:51:10Z | - |
dc.date.available | 2021-08-02T14:51:10Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2017-09 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/19422 | - |
dc.description.abstract | A low resistivity copper (Cu) film was used as a source/drain contact layer to fabricate high performance amorphous In-Zn-Sn-O (a-IZTO) thin-film transistors (TFTs). The calcium (Ca)-doped Cu films greatly simplified the conventional Cu/diffusion barrier stack structure and process, which allowed the production of promising aIZTO TFTs with a saturation mobility of 22.8 cm(2)/Vs and an ION/OFF ratio of 108. Furthermore, the a-IZTO TFTs with the Ca -doped Cu contact exhibited better gate bias thermal stress-induced stabilities than those with the pure Cu contact. This was attributed to the effective formation of a self-diffusion CuO. barrier at the Cu/IZTO interfaces. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | High performance a-InZnSnO thin-film transistor with a self-diffusion-barrier formable copper contact | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1016/j.tsf.2017.03.014 | - |
dc.identifier.scopusid | 2-s2.0-85019677910 | - |
dc.identifier.wosid | 000411420100002 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.637, pp.3 - 8 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 637 | - |
dc.citation.startPage | 3 | - |
dc.citation.endPage | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordAuthor | Amorphous indium tin zinc oxide | - |
dc.subject.keywordAuthor | Copper-calcium alloy | - |
dc.subject.keywordAuthor | High mobility | - |
dc.subject.keywordAuthor | Thin-film transistors | - |
dc.subject.keywordAuthor | Stability | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S004060901730189X?via%3Dihub | - |
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