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Synergetic Influences of Mixed-Host Emitting Layer Structures and Hole Injection Layers on Efficiency and Lifetime of Simplified Phosphorescent Organic Light-Emitting Diodes

Authors
Han, Tae-HeeKim, Young HoonKim, Myung HwanSong, WonjunLee, Tae-Woo
Issue Date
Mar-2016
Publisher
AMER CHEMICAL SOC
Keywords
organic light-emitting diodes; simple structure; mixed host; degradation mechanism; lifetime; nondestructive analysis; transient electroluminescence; capacitance-voltage
Citation
ACS APPLIED MATERIALS & INTERFACES, v.8, no.9, pp 6152 - 6163
Pages
12
Indexed
SCI
SCIE
SCOPUS
Journal Title
ACS APPLIED MATERIALS & INTERFACES
Volume
8
Number
9
Start Page
6152
End Page
6163
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/194300
DOI
10.1021/acsami.5b11791
ISSN
1944-8244
1944-8252
Abstract
We used various nondestructive analyses to investigate various host material systems in the emitting layer (EML) of simple-structured, green phosphorescent organic light-emitting diodes (OLEDs) to clarify how the host systems affect its luminous efficiency (LE) and operational stability. An OLED that has a unipolar single-host EML with conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) showed high operating voltage, low LE (similar to 26.6 cd/A, 13.7 lm/W), and short lifetime (similar to 4.4 h @ 1000 cd/m(2)). However, the combined use of a gradient mixed-host EML and a molecularly controlled HIL that has increased surface work function (WF) remarkably decreased operating voltage and improved LE (similar to 68.7 cd/A, 77.0 lm/W) and lifetime (similar to 70.7 h @ 1000 cd/m(2)). Accumulated charges at the injecting interfaces and formation of a narrow recombination zone close to the interfaces are the major factors that accelerate degradation of charge injection/transport and electroluminescent properties of OLEDs, so achievement of simple-structured OLEDs with high efficiency and long lifetime requires facilitating charge injection and balanced transport into the EMI, and distributing charge carriers and excitons in EML.
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