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Improving Specific Contact Resistivity of a-IGZO Thin-Film-Transistors via Multi-stack Interlayer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeong, Joo Hee | - |
| dc.contributor.author | Yoon, Seong Hun | - |
| dc.contributor.author | Kim, Taikyu | - |
| dc.contributor.author | Jeong, Jae Kyeong | - |
| dc.date.accessioned | 2024-11-28T08:28:23Z | - |
| dc.date.available | 2024-11-28T08:28:23Z | - |
| dc.date.issued | 2024-06 | - |
| dc.identifier.issn | 0097-966X | - |
| dc.identifier.issn | 2168-0159 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/195263 | - |
| dc.description.abstract | We report the effects of sputter-based multi-stack interlayer on the electrical contact properties of a-IGZO TFTs. The a-IGZO TFTs with a multi-stack interlayer of TiN and IGTO showed remarkable outcomes, including the lowest specific contact resistivity (ρC) and the highest field-effect mobility (μFET). This research suggests a highly effective approach to reduce the contact resistivity of oxide semiconductors by nearly two orders magnitude. | - |
| dc.format.extent | 2 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.title | Improving Specific Contact Resistivity of a-IGZO Thin-Film-Transistors via Multi-stack Interlayer | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1002/sdtp.17835 | - |
| dc.identifier.scopusid | 2-s2.0-85202639580 | - |
| dc.identifier.bibliographicCitation | Digest of Technical Papers - SID International Symposium, v.55, no.1, pp 1490 - 1491 | - |
| dc.citation.title | Digest of Technical Papers - SID International Symposium | - |
| dc.citation.volume | 55 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 1490 | - |
| dc.citation.endPage | 1491 | - |
| dc.type.docType | Conference paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Amorphous films | - |
| dc.subject.keywordPlus | Amorphous semiconductors | - |
| dc.subject.keywordPlus | Indium phosphide | - |
| dc.subject.keywordPlus | MOS devices | - |
| dc.subject.keywordPlus | MOSFET devices | - |
| dc.subject.keywordPlus | Semiconducting indium phosphide | - |
| dc.subject.keywordPlus | Thin film circuits | - |
| dc.subject.keywordAuthor | Amorphous oxide semiconductor | - |
| dc.subject.keywordAuthor | IGTO | - |
| dc.subject.keywordAuthor | IGZO | - |
| dc.subject.keywordAuthor | specific contact resistivity | - |
| dc.subject.keywordAuthor | thin-film transistor | - |
| dc.identifier.url | https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.17835 | - |
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